Thermoelectric and electrical transport properties of Mg2Si multi-doped with Sb, Al and Zn

被引:39
作者
Zhao, Jianbao [1 ]
Liu, Zhenxian [2 ]
Reid, Joel [3 ]
Takarabe, Kenichi [4 ]
Iida, Tsutomu [5 ]
Wang, Bosen [6 ]
Yoshiya, Uwatoko [6 ]
Tse, John S. [1 ]
机构
[1] Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5E2, Canada
[2] Carnegie Inst Sci, Geophys Lab, Washington, DC 20015 USA
[3] Canadian Light Source Inc, Saskatoon, SK S7N 2V3, Canada
[4] Okayama Univ Sci, Fac Sci, Dept Appl Sci, Okayama, Japan
[5] Tokyo Univ Sci, Dept Mat Sci & Technol, Tokyo 162, Japan
[6] Univ Tokyo, Inst Solid State Phys, Chiba, Japan
基金
加拿大自然科学与工程研究理事会;
关键词
ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; PERFORMANCE; 1ST-PRINCIPLES; SURFACE; FIGURE; MG2GE; MERIT; FILMS;
D O I
10.1039/c5ta03751d
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Enhanced thermoelectric and electrical transport properties of Mg2Si-based thermoelectric materials have been achieved by multi-doping with Sb, Al and Zn. Results on the investigation of the electrical transport and thermoelectric properties of multi-doped samples prepared using the spark plasma sintering technique are reported. Synchrotron radiation powder X-ray diffraction was used to characterize the structures of the doped samples. The electrical transport properties were determined from mid-infrared reflectivities, Hall effect and conventional quasi-four probe conductivity measurements. Using the electron concentrations (N) determined from the Hall coefficients, the effective masses (m*) were calculated from the frequency of the plasma edge (omega(P)) of the infrared reflectivities. The thermoelectric performance and thermoelectric figure of merits (ZT) in the temperature range of 300 K to 900 K of the doped Mg2Si compounds were calculated from the measured temperature dependent electrical conductivity (s), Seebeck coefficient (S), and thermal conductivity (k). A maximum ZT of 0.964 was found for Sb0.5% Zn0.5% doped Mg2Si at 880 K. This value is comparable to those of PbTe based thermoelectric materials.
引用
收藏
页码:19774 / 19782
页数:9
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