Design for ultrahigh-Q position-controlled nanocavities of single semiconductor nanowires in two-dimensional photonic crystals

被引：22

作者：

Birowosuto, Muhammad Danang ^{[1
,2
]}

Yokoo, Atsushi ^{[1
,2
]}

Taniyama, Hideaki ^{[1
,2
]}

Kuramochi, Eiichi ^{[1
,2
]}

Takiguchi, Masato ^{[1
,2
]}

Notomi, Masaya ^{[1
,2
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] NTT Corp, NTT Nanophoton Ctr, Atsugi, Kanagawa 2430198, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 11期

基金：

日本科学技术振兴机构;

关键词：

HIGH-Q CAVITIES; QUANTUM-DOT; LINE-DEFECT; RESONATORS; OPTICS; LASER; SLAB;

D O I：

10.1063/1.4768437

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using finite-difference time-domain simulation, we show that ultrahigh-Q nanocavities can be obtained through the manipulation of a single semiconductor nanowire (NW) inside a slot in a line defect of a two-dimensional photonic crystal. By controlling the design and its lattice parameters of the photonic crystal, we have achieved a quality factor Q larger than 10(6) and a mode volume V-c smaller than 0: 11 mu m(3) (1.25 of a cubic wavelength in the NW) for a cavity peak in the telecommunication band. This design is useful for realizing a position-controlled cavity in a photonic crystal. Here, we also discuss the small dependence of the Q-factor, the V-c, and the cavity peak in relation to the position of the NW inside the slot and the potential application to the cavity quantum electrodynamics using the embedded-emitter NW. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768437]

引用

页数：10

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