SiP for GSM/EDGE in CMOS Technology

被引：0

作者：

Puma, G. Li ^{[1
]}

Kristan, E. ^{[1
]}

De Nicola, P. ^{[2
]}

Vannier, C. ^{[3
]}

Greyling, B. ^{[4
]}

Piccolella, S. ^{[5
]}

机构：

[1] Infineon Technol, Duisburg, Germany

[2] Infineon Technol, Sophia Antipolis, France

[3] Infineon Technol, Xian, Peoples R China

[4] Infineon Technol, Villach, Austria

[5] Infineon Technol, Padua, Italy

来源：

PROCEEDINGS OF THE IEEE 2008 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2008年

关键词：

D O I：

10.1109/CICC.2008.4672174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development in the field of RF and baseband (BB) integration in nanoscale CMOS technology for cellular systems over the last recent years has shown significant progress [1], [3], [4] The successful integration of the RF transceiver with digital baseband processor enables mobile phone manufacturer to build ultra-low cost phones for GSM/GPRS in CMOS technology [2]. This trend towards continuous system integration for mobile phones with an advanced feature set providing high data rate communication, multimedia and camera capabilities [4]. The support of various features requires a system solution including the power-management unit (PMU) with highly efficient DC-DC converters to reduce the overall power consumption. However, this imposes a major challenge for the integration of the RF due to crosstalk and thermal heating effects caused by the PMU and BB part.

引用

页码：671 / +

页数：2

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