Current-Limiting Effect in Barium-Doped Indium Oxide Ceramics

被引：1

作者：

Bondarchuk, Alexander N. ^{[1
]}

Glot, Alexander B. ^{[1
]}

Leyva-Porras, Cesar ^{[2
]}

Aguilar-Martinez, Josue A. ^{[3
]}

机构：

[1] Univ Tecnol Mixteca, Huajuapan De Leon 69000, Oaxaca, Mexico

[2] SC Unidad Monterrey, Ctr Invest Mat Avanzados, Apodaca 66600, Nuevo Leon, Mexico

[3] Univ Autonoma Nuevo Leon, Fac Ingn Mecan & Elect, Ctr Invest & Innovac Ingn Aeronaut, Apodaca 66600, Nuevo Leon, Mexico

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 10期

关键词：

Grain boundaries; current limiting; indium oxide; barium-doped indium oxide ceramics; CURRENT SATURATION; ZINC-OXIDE; SENSOR; IN2O3; FILMS; CONDUCTIVITY; TRANSPORT; BEHAVIOR; CLUSTER; MODEL;

D O I：

10.1007/s11664-015-3920-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A current-limiting effect (current saturation and even its decrease on voltage increase) was found in barium-doped indium oxide ceramics sintered at temperatures of 1473 K to 1573 K. For ceramic obtained at higher temperature (1673 K), current limiting was not observed. The results of electrical measurements, x-ray diffraction analysis, and scanning electron microscopy suggest that the electrical conduction in the material exhibiting the current-limiting effect was controlled by grain boundaries.

引用

页码：3646 / 3652

页数：7

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