Effect of Indocyanine Green and Infrared Diode Laser toStreptococcus mutansBiofilms

被引:6
作者
Kim, Yeowon [1 ]
Park, Howon [1 ]
Lee, Juhyun [1 ]
Seo, Hyunwoo [1 ]
Lee, Siyoung [2 ]
机构
[1] Gangneung Wonju Natl Univ, Coll Dent, Dept Pediat Dent, Oral Sci Res Ctr, 7 Jukheon Gil, Kangnung 25457, South Korea
[2] Gangneung Wonju Natl Univ, Coll Dent, Dept Microbiol & Immunol, Kangnung, South Korea
关键词
photodynamic therapy; Streptococcus mutans; biofilm; caries prevention; near-infrared diode laser; indocyanine green; photothermal therapy; PHOTODYNAMIC THERAPY; STREPTOCOCCUS-MUTANS; BIOFILM FORMATION; PHOTOSENSITIZERS;
D O I
10.1089/photob.2019.4796
中图分类号
R61 [外科手术学];
学科分类号
摘要
Objective:The aim of this study was to quantitatively and qualitatively evaluate the effects of the indocyanine green (ICG)-near-infrared (NIR) photoreaction onStreptococcus mutansbiofilms. Background:ICG recently emerged as a photosensitive agent for photodynamic therapy. Although the effects of ICG-NIR onS. mutansinhibition are documented, little is known about its influence on biofilms, which are resistant to antimicrobial treatment and a major cause of plaque that leads to dental caries. Methods:ICG was used as a photosensitizer with a diode laser irradiated in a rectangular shape (810 nm, 300 mW) as a light source onS. mutansATCC 25175 biofilms. Viability was determined by the colony forming unit (CFU) count and confocal laser-scanning microscopy. The biofilm surface temperature was measured with a one-channel thermocouple thermometer. Results:ICG and NIR diode laser significantly decreased the CFU count ofS. mutanscompared with the control group in a time-dependent manner. When irradiated with light after ICG application, temperature changes of 8.4 degrees C, 12.4 degrees C, and 14.9 degrees C were observed with 10, 30, and 60 sec of irradiation, respectively. Conclusions:The ICG-NIR diode laser photoreaction can inhibitS. mutansbiofilms, especially at 60 sec. An optimized protocol is needed for clinical application of ICG-NIR diode laser treatment.
引用
收藏
页码:646 / 652
页数:7
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