Fast AlGaN growth in a whole composition range in planetary reactor

被引：16

作者：

Lundin, W. V. ^{[1
]}

Nikolaev, A. E. ^{[1
]}

Rozhavskaya, M. M. ^{[1
]}

Zavarin, E. E. ^{[1
]}

Sakharov, A. V. ^{[1
]}

Troshkov, S. I. ^{[1
]}

Yagovkina, M. A. ^{[1
]}

Tsatsulnikov, A. F. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 196140, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 370卷

关键词：

Parasitic reactions; Metalorganic vapor phase epitaxy; AlGaN; AlN; Nitrides; MOVPE;

D O I：

10.1016/j.jcrysgro.2012.09.056

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Growth of AlGaN in AIX2000 HT planetary reactor was investigated under the wide range of NH3, TMAI and TMGa flows. At low NH3 flows gallium incorporation in AlGaN is suppressed by surface chemical process of Ga-containing nitrides decomposition in presence of hydrogen. The rate of this reaction strongly depends on NH3, H-2 and TMAI flows. At high NH3 flows influence of hydrogen on epitaxial process is less pronounced but strong gas-phase parasitic reactions results in both aluminum and gallium losses which limit the achievable growth rate and aluminum content in the layer. Adjustment of reactor conditions lets to reach growth rates of 2-3 mu m/h for AlGaN layers in the whole composition range and 5-6.5 mu m/h in the range of Al content of 25-50%. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：7 / 11

页数：5

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