Tetrahedral amorphous carbon thin film transistors

This paper describes the design and fabrication of a carbon based thin film transistor (TFT). The active layer is formed from a novel form of amorphous carbon (a-C) known as tetrahedrally bonded amorphous carbon (ta-C) which can be deposited at room temperature using a filtered cathodic vacuum are (FCVA) technique. In its 'as grown' condition, ta-C is p-type and the devices described here, produced using undoped material, exhibit p-channel operation.