Tetrahedral amorphous carbon thin film transistors

被引：0
|
作者：
Clough, PJ
Kleinsorge, B
Milne, WI
Robertson, J
机构：
来源：
III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES | 1996年 / 423卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper describes the design and fabrication of a carbon based thin film transistor (TFT). The active layer is formed from a novel form of amorphous carbon (a-C) known as tetrahedrally bonded amorphous carbon (ta-C) which can be deposited at room temperature using a filtered cathodic vacuum are (FCVA) technique. In its 'as grown' condition, ta-C is p-type and the devices described here, produced using undoped material, exhibit p-channel operation.
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页码：39 / 43
页数：5
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