Single-electron tunneling in thin metal granular films

被引:9
|
作者
Inoue, Y
Inata, M
Fujii, M
Hayashi, S
Yamamoto, K
机构
[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
[2] Kobe Univ, Grad Sch Sci & Technol, Nada Ku, Kobe, Hyogo 6578501, Japan
关键词
single-electron tunneling; nanostructures; metal granular films; electrical properties and measurements;
D O I
10.1016/S0040-6090(99)00176-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electrical transport properties of extremely thin metal (Ag and Au) granular films fabricated by a cosputtering method were studied. High-resolution transmission electron microscopic observations revealed that Ag (Au) nanocrystals several nanometers in diameter were dispersed in thin films. In spite of the large size (100 x 100 mu m(2)) of the devices prepared, the Coulomb blockade and the Coulomb staircase were observed on current-voltage (I-V) characteristics at relatively high temperature (100 K). Although the samples were prepared under the same conditions, the I-V curves varied from sample to sample. The observed I-V curves were well fitted by Monte Carlo simulation assuming that the samples consist of a few serial and parallel connections of nanocrystals. The present results suggest that the macroscopic conduction of thin granular films is dominated by only a few special conduction paths. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:289 / 292
页数:4
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