Single-electron tunneling in thin metal granular films

被引：9
|
作者：
Inoue, Y
Inata, M
Fujii, M
Hayashi, S
Yamamoto, K
机构：
[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
[2] Kobe Univ, Grad Sch Sci & Technol, Nada Ku, Kobe, Hyogo 6578501, Japan
来源：
THIN SOLID FILMS | 1999年 / 349卷 / 1-2期
关键词：
single-electron tunneling; nanostructures; metal granular films; electrical properties and measurements;
D O I：
10.1016/S0040-6090(99)00176-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrical transport properties of extremely thin metal (Ag and Au) granular films fabricated by a cosputtering method were studied. High-resolution transmission electron microscopic observations revealed that Ag (Au) nanocrystals several nanometers in diameter were dispersed in thin films. In spite of the large size (100 x 100 mu m(2)) of the devices prepared, the Coulomb blockade and the Coulomb staircase were observed on current-voltage (I-V) characteristics at relatively high temperature (100 K). Although the samples were prepared under the same conditions, the I-V curves varied from sample to sample. The observed I-V curves were well fitted by Monte Carlo simulation assuming that the samples consist of a few serial and parallel connections of nanocrystals. The present results suggest that the macroscopic conduction of thin granular films is dominated by only a few special conduction paths. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：289 / 292
页数：4
相关论文
共 50 条
  • [11] Computing division using single-electron tunneling technology
    Meenderinck, Cor
    Cotofana, Sorin
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2007, 6 (04) : 451 - 459
  • [12] An Analytical Model for NDC Blocks with Single-Electron Tunneling
    Li, Lin
    Chen, Chunhong
    2015 IEEE 15TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2015, : 448 - 451
  • [13] Single-electron tunneling through amorphous carbon dots array
    Miura, N
    Numaguchi, T
    Yamada, A
    Konagai, M
    Shirakashi, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12A): : L1619 - L1621
  • [14] Single-electron tunneling transistor implementation of periodic symmetric functions
    Hu, CH
    Cotofana, SD
    Jiang, JF
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2004, 51 (11) : 593 - 597
  • [15] Unveiling single-electron tunneling in nanogranular ultrathin films for sensor applications via hyperspectral conductive AFM
    Bakkali, Hicham
    Dominguez, Manuel
    MATERIALS LETTERS, 2025, 382
  • [16] Effect of the tunneling rates on the conductance characteristics of single-electron transistors
    Scholze, A
    Schenk, A
    Fichtner, W
    IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (08) : 1242 - 1246
  • [17] A stochastic associative memory using single-electron tunneling devices
    Saen, M
    Morie, T
    Nagata, M
    Iwata, A
    IEICE TRANSACTIONS ON ELECTRONICS, 1998, E81C (01): : 30 - 35
  • [18] Compact current and current noise models for single-electron tunneling transistors
    Hu, CH
    Cotofana, SD
    Jiang, JF
    2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY, 2004, : 361 - 364
  • [19] Single-Electron Tunneling PbS/InP Heterostructure Nanoplatelets for Synaptic Operations
    Jarschel, Paulo
    Kim, Jin Ho
    Biadala, Louis
    Berthe, Maxime
    Lambert, Yannick
    Osgood, Richard M., III
    Patriarche, Gilles
    Grandidier, Bruno
    Xu, Jimmy
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (32) : 38450 - 38457
  • [20] Analog-to-digital converter based on single-electron tunneling transistors
    Hu, CH
    Cotofana, SD
    Jiang, JF
    Cai, QY
    IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2004, 12 (11) : 1209 - 1213
12345