Solar-Blind Photodetectors based on Ga2O3 and III-Nitrides

被引：5

作者：

McClintock, Ryan ^{[1
]}

Jaud, Alexander ^{[1
]}

Gautam, Lakshay ^{[1
]}

Razeghi, Manijeh ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XVII | 2020年 / 11288卷

关键词：

Solar blind photo detectors; AlGaN; Ga2O3; Avalanche Photodetectors; BETA-GA2O3; THIN-FILMS; MOLECULAR-BEAM EPITAXY; SEPARATE ABSORPTION; SAPPHIRE; EPSILON-GA2O3; DETECTORS; GROWTH; LAYERS;

D O I：

10.1117/12.2549606

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, there has been a surge of interest in the wide bandgap semiconductors for solar blind photo detectors (SBPD). This work presents our recent progress in the growth/doping of AlGaN and Ga2O3 thin films for solar blind detection applications. Both of these thin films grown are grown by metal organic chemical vapor deposition (MOCVD) in the same Aixtron MOCVD system. Solar-blind metal-semiconductor-metal photodetectors were fabricated with Ga2O3. Spectral responsivity studies of the MSM photodetectors revealed a peak at 261 nm and a maximum EQE of 41.7% for a -2.5 V bias. We have also demonstrated AlGaN based solar-blind avalanche photodiodes with a gain in excess of 57,000 at similar to 100 volts of reverse bias. This gain can be attributed to avalanche multiplication of the photogenerated carriers within the device. Both of these devices show the potential of wide bandgap semiconductors for solar blind photo detectors.

引用

页数：11

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