Voltage and temperature effect on dielectric charging for RF-MEMS capacitive switches reliability investigation

被引：64

作者：

Lamhamdi, M. ^{[1
]}

Pons, P. ^{[1
]}

Zaghloul, U. ^{[1
]}

Boudou, L.

Coccetti, F. ^{[1
]}

Guastavino, J. ^{[2
]}

Segui, Y. ^{[2
]}

Papaioannou, G. ^{[1
,3
]}

Plana, R. ^{[1
]}

机构：

[1] Univ Toulouse, LAAS, CNRS, F-31077 Toulouse, France

[2] Univ Toulouse, LAPLACE, F-31077 Toulouse, France

[3] Univ Athens, Solid State Phys Sect, Athens 15784, Greece

来源：

MICROELECTRONICS RELIABILITY | 2008年 / 48卷 / 8-9期

关键词：

D O I：

10.1016/j.microrel.2008.07.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we Study the effect of stress voltage and temperature on the dielectric charging and discharging processes of silicon nitride thin films used in RF-MEMS capacitive switches. The investigation has been performed oil PECVD-SiNx dielectric materials deposited under different deposition conditions. The leakage current was found to obey the Poole-Frenkel law. The charging current decay was found to be affected by the presence of defects which are generated by electron injection at high electric fields. At high temperatures power law decay was monitored. Finally, the temperature dependence of leakage Current revealed the presence of thermally activated mechanisms with similar activation energies in all materials. (C) 2008 Published by Elsevier Ltd.

引用

页码：1248 / 1252

页数：5

共 17 条

[1] Nitrogen bonding environments and local order in hydrogenated amorphous silicon nitride films studied by Raman spectroscopy [J].