Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

被引：66

作者：

Watanabe, Takayuki ^{[1
]}

Tombet, Stephane Boubanga ^{[1
]}

Tanimoto, Yudai ^{[1
]}

Wang, Yuye ^{[2
]}

Minamide, Hiroaki ^{[2
]}

Ito, Hiromasa ^{[2
]}

Fateev, Denis ^{[3
]}

Popov, Viacheslav ^{[3
]}

Coquillat, Dominique ^{[4
]}

Knap, Wojciech ^{[4
]}

Meziani, Yahya ^{[5
]}

Otsuji, Taiichi ^{[1
]}

机构：

[1] Tohoku Univ, Rsch Inst Elect Commun, Sendai, Miyagi 980, Japan

[2] RIKEN, Adv Sci Inst, Tokyo, Japan

[3] RAS, Kotelnikov Inst Radio Eng Electron, Moscow, Russia

[4] Univ Montpellier, CNRS, Labs DLC2, Montpellier, France

[5] Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain

来源：

SOLID-STATE ELECTRONICS | 2012年 / 78卷

关键词：

Plasmon; Terahertz; Detector; Grating; HEMT; Asymmetry; RADIATION;

D O I：

10.1016/j.sse.2012.05.047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric dual-grating-gate (A-DGG) high electron mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz with a superior low noise equivalent power of 15 pW/root Hz using InGaAs/InAlAs/InP material systems. When THz radiation is absorbed strong THz photocurrent is first generated by the nonlinearity of the plasmon modes resonantly excited in undepleted portions of the 20 electron channel under the high-biased sub-grating of the A-DGG (as a quadratic nature of the product of local carrier density and velocity perturbations), then the THz photovoltaic response is read out at high-impedance parts of 2D channel under the other sub-grating biased at the level close to the threshold. Extraordinary enhancement by more than two orders of magnitude of the responsivity is verified with respect to that for a symmetric DGG structure. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：109 / 114

页数：6

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