Copper bonded layers analysis and effects of copper surface conditions on bonding quality for three-dimensional integration

被引：64

作者：

Chen, KN ^{[1
]}

Tan, CS ^{[1
]}

Fan, A ^{[1
]}

Reif, R ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2005年 / 34卷 / 12期

关键词：

wafer bonding; copper; oxide; surface roughness;

D O I：

10.1007/s11664-005-0151-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to achieve copper wafer bonding with good quality, surface conditions of copper films are important factors. In this work, the effects of surface conditions, such as surface roughness and oxide formation on the bond strength, were investigated under different bonding conditions. Prior to bonding, copper film surfaces were kept in the atmosphere for less than 1 min, 3 days, and 7 days, respectively, to form different thicknesses of oxide on the surface. Some copper wafers were cleaned using HCl before bonding in order to remove the surface oxide. Surface roughness of copper films with and without HCl cleaning was examined. Since surface cleaning before bonding removes oxides but creates surface roughness, it is important to study the corresponding bond strength under different bonding conditions. These results offer the required information for the process design of copper wafer bonding in three-dimensional integration applications.

引用

页码：1464 / 1467

页数：4

共 18 条

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