Mid-Infrared Ge-on-Si Electro-absorption Modulator

被引：0

作者：

Li, Tiantian ^{[1
,2
]}

Nedeljkovic, Milos ^{[1
]}

Hattasan, Nannicha ^{[1
]}

Khokhar, Ali Z. ^{[1
]}

Reynolds, Scott A. ^{[1
]}

Stankovic, Stevan ^{[1
]}

Banakar, Mehdi ^{[1
]}

Cao, Wei ^{[1
]}

Qu, Zhibo ^{[1
]}

Littlejohns, Callum G. ^{[1
]}

Penades, Jordi Soler ^{[1
]}

Grabska, Katarzyina ^{[1
]}

Mastronardi, Lorenzo ^{[1
]}

Thomson, David J. ^{[1
]}

Gardes, Frederic Y. ^{[1
]}

Reed, Graham T. ^{[1
]}

Wu, Hequan ^{[2
]}

Zhou, Zhiping ^{[2
]}

Mashanovich, Goran Z. ^{[1
]}

机构：

[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

[2] Peking Univ, Sch Elect Engn & Comp Sci, State Key Lab Adv Opt Commun Syst & Networks, Beijing 100871, Peoples R China

来源：

2017 IEEE 14TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2017年

基金：

英国工程与自然科学研究理事会;

关键词：

GERMANIUM; SILICON; SOI;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the first waveguide electro-absorption modulator in germanium-on-silicon material platform at 3.8 mu m wavelength, based on free-carrier injection into a straight waveguide. The fabricated 1 mm long device has modulation depth of >35 dB at 7 V.

引用

页码：7 / 8

页数：2

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