Design of the Lorentz Force Based Resonant Magnetic Sensor for SiGe MEMS on CMOS Process

被引：0

作者：

Hongoh, Hiroyuki ^{[1
]}

Tsukiyama, Motoki ^{[1
]}

Kanda, Kensuke ^{[1
]}

Fujita, Takayuki ^{[1
]}

Maenaka, Kazusuke ^{[1
]}

机构：

[1] Univ Hyogo, Dept EECS, Grad Sch Engn, Himeji, Hyogo, Japan

来源：

2018 JOINT 7TH INTERNATIONAL CONFERENCE ON INFORMATICS, ELECTRONICS & VISION (ICIEV) AND 2018 2ND INTERNATIONAL CONFERENCE ON IMAGING, VISION & PATTERN RECOGNITION (ICIVPR) | 2018年

关键词：

component; magnetic sensor; monolithic integration; SiGe; MEMS;

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

This paper describes the resonant type magnetic sensor completely compatible to the micro electromechanical systems (MEMS) batch fabrication process of SiGe. The resonant vibration of the sensor is excited by the Lorentz force that is proportional to the driving current and applied magnetic field. Since the sensitivity of the sensor reaches the order of geomagnetic field, the magnetic sensor can be incorporated into inertial measurement unit (IMU), which is fabricated with accelerometer and gyroscope. In addition, low deposition temperature of SiGe is advantageous to realize the monolithic integration of IMU combo sensors onto CMOS circuit. For inspection, the test device was fabricated with Si-SOL

引用

页码：169 / 173

页数：5