The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes

被引：15
作者：
Monakhov, A [1 ]
Krier, A [1 ]
Sherstnev, VV [1 ]
机构：
[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 03期
关键词：
D O I：
10.1088/0268-1242/19/3/034
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It has been observed that current crowding and the position of the ohmic contact can have a significant influence on the electroluminescence of InAs-based mid-infrared light-emitting diodes. The asymmetry in the contact position leads to the appearance of highly directional light emission from the mesa edge and a very strong spectral current tuning behaviour, with a tuning rate as high as 1.0 nm mA(-1) over a tuning range of 180 nm. This effect is due to the current crowding near the edge of the mesa resulting in localized optical gain near the mesa boundary.
引用
收藏
页码：480 / 484
页数：5
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