Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy

被引：18

作者：

Newman, Scott A. ^{[1
]}

Kamber, Derrick S. ^{[2
]}

Baker, Troy J. ^{[2
]}

Wu, Yuan ^{[2
]}

Wu, Feng ^{[2
]}

Chen, Zhen ^{[1
]}

Namakura, Shuji ^{[2
]}

Speck, James S. ^{[2
]}

DenBaars, Steven P. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 12期

关键词：

aluminium compounds; atomic force microscopy; cathodoluminescence; dislocations; III-V semiconductors; MOCVD; sapphire; semiconductor growth; substrates; transmission electron microscopy; vapour phase epitaxial growth; wide band gap semiconductors; HIGH-TEMPERATURE; GROWTH; SUBSTRATE; ALXGA1-XN; LAYERS;

D O I：

10.1063/1.3089253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Coalesced, crack-free (0001) AlN films were grown on stripe patterned sapphire substrates without AlN seed layers using hydride vapor phase epitaxy. Using templates with stripes oriented in the < 11(2) over bar 0 >(sapphire) direction, lateral epitaxial overgrowth AlN films were coalesced over trench regions as wide as 10 mu m despite parasitic sidewall and trench growth. Using transmission electron microscopy, a reduction in the dislocation density from 1.6x10(9) cm(-2) in the seed region to less than 1.0x10(8) cm(-2) in the wing region was demonstrated. Atomic force microscopy and cathodoluminescence measurements were also performed to assess the material quality.

引用

页数：3

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