a-Si1-xCx:H TFTs:: Fabrication and modeling

被引：0

作者：

Estrada, M. ^{[1
]}

Cerdeira, A. ^{[1
]}

Garcia, R. ^{[2
]}

Iniguez, B. ^{[2
]}

机构：

[1] CINVESTAV, Dept Ingn Elect, Secc Elect Estado Solido, IPN, Av IPN 2508 San Pedro Zacatenco,CP 07360, Mexico City, DF, Mexico

[2] Univ Rovira & Virgili, Dept Engn Electron Elect & Automat, E-43007 Tarragona, Spain

来源：

2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we resume results obtained in the fabrication and characterization of first a-Si1-xCx:H TFTs. The behavior with temperature of these devices was studied using a unified model and extraction parameter method, UMEM, previously developed by us and applied to amorphous, polycrystalline and nanocrystalline Si TFTs as well as to organic TFTs. The behavior and variation with temperature of the transfer and output characteristics, of mobility and saturation parameter. as well as other features of these TFTs with active layer containing both Si and C are shown and compared to those of typical a-Si:H TFTs. Localized traps density distribution and their activation energies were estimated. Instability after voltage stress is also shown. First results after polarization of the amorphous TFts by laser annealing are presented.

引用

页码：327 / +

页数：3

共 14 条

[1] N-type doping in PECVD a-Si1-xCx:H obtained under 'starving plasma' condition [J].