InGaZnO Ferroelectric Thin-Film Transistor Using HfO2/Al2O3/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

被引：4

作者：

Kao, Min-Lu ^{[1
]}

Liang, Yan-Kui ^{[2
]}

Lin, Yuan ^{[1
]}

Weng, You-Chen ^{[3
]}

Dee, Chang-Fu ^{[4
]}

Liu, Po-Tsun ^{[5
]}

Lee, Ching-Ting ^{[6
]}

Chang, Edward Yi ^{[7
,8
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ NYCU, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[2] Natl Yang Ming Chiao Tung Univ NYCU, Int Coll Semicond Technol, Hsinchu 30010, Taiwan

[3] Natl Yang Ming Chiao Tung Univ, Coll Photon, Tainan 71150, Taiwan

[4] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect IMEN, Bangi 43600, Malaysia

[5] Natl Yang Ming Chiao Tung Univ NYCU, Dept Photon & Inst Electroopt Engn, Hsinchu 30010, Taiwan

[6] Yuan Ze Univ, Dept Elect Engn, Taoyuan 320, Taiwan

[7] Natl Yang Ming Chiao Tung Univ NYCU, Int Coll Semicond Technol, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[8] Natl Yang Ming Chiao Tung Univ NYCU, Dept Elect Engn, Hsinchu 30010, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 12期

关键词：

Aluminum nitride; III-V semiconductor materials; Logic gates; Temperature measurement; Dielectric measurement; Hysteresis; Dielectrics; MOCVD; AlN; Epitaxy; IGZO TFTs;

D O I：

10.1109/LED.2022.3216620

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, HfO2/Al2O3/AlN hybrid stack capacitor with ferroelectric switching is experimentally demonstrated for the first time. The metal-insulator-semiconductor (MIS) capacitors and InGaZnO4 (IGZO) channel thin-film transistors (TFTs) with the HfO2/Al2O3/AlN hybrid gate stack are demonstrated in this letter. With the hybrid gate stack, the TFT exhibits the clear counter-clockwisememory windows (MWs) of 6.5 V, 6.2 V and 28.7 V respectively measured at 368 K, RT, and 80 K under the sweep voltage of +/- 40 V. Moreover, the retention over 10(4) s and the endurance over 10(4) cycles are demonstrated under the program(P)/erase (E) pulsed height of +/- 45 V. The results exhibit the applicable possibility of the HfO2/Al2O3/AlN stack for the high voltage memory device applications.

引用

页码：2105 / 2108

页数：4

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