Variable range hopping and positive magnetoresistance in n type semiconductor CuIn3Se5

被引：7

作者：

Wasim, S. M. ^{[1
]}

Essaleh, L. ^{[2
]}

Marin, G. ^{[3
]}

Galibert, J. ^{[4
,5
]}

机构：

[1] Univ Los Andes, Fac Ciencias, Ctr Estudios Semicond, Merida 5101, Venezuela

[2] Cadi Ayyad Univ, Fac Sci & Technol, Lab Condensed Matter & Nanostruct LMCN, Dept Appl Phys, Marrakech, Morocco

[3] IVIC, Ctr Invest & Tecnol Mat CITeMa, LEIMN, Maracaibo 4011, Venezuela

[4] CNRS INSA UJF UPS, Lab Natl Champs Magnet Intenses, UPR3228, Toulouse, France

[5] CNRS INSA UJF UPS, Lab Natl Champs Magnet Intenses, UPR3228, Grenoble, France

来源：

MATERIALS RESEARCH BULLETIN | 2017年 / 87卷

关键词：

semiconductors; electronic materials; semiconductivity; X-ray diffraction; electrical properties; defects; electronic structure; COPPER INDIUM DISELENIDE; NEGATIVE MAGNETORESISTANCE; CUINSE2; REGIME; CONDUCTION;

D O I：

10.1016/j.materresbull.2016.12.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Variable range hopping mechanism of Mott type is observed for the first time in two different temperature ranges between 10K and 65 K in the ordered defect compound n-CuIn3Se5. Analysis of magnetic field dependence of positive magnetoresistance up to 27T that has been made at several temperatures up to 55K, shows B-2 and B-1/3 behavior in low and high field regions. This is in good agreement with the theory of Shklovskii-Efros for hopping conduction in lightly doped semiconductors. The field dependence of the localization temperature To and localization length is discussed. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：219 / 223

页数：5

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