A W-band 21.1 dBm Power Amplifier with an 8-way Zero-degree Combiner in 45 nm SOI CMOS

被引：0

作者：

Tai, Wei ^{[1
]}

Ricketts, David S. ^{[2
]}

机构：

[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

[2] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA

来源：

2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2014年

关键词：

Power amplifiers; power combining; millimeter-wave; W-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a W-band power amplifier (PA) in 45 nm SOI CMOS. The PA incorporates an 8-way zero-degree combiner to efficiently combine 8 parallel PA units, each of which is a 2-stage cascode PA. At 80 GHz, the PA achieves a saturated output power (P-sat) of 21.1 dBm, 10.1 dB peak gain, 5.2% peak PAE, and 12 GHz 3-dB bandwidth, and it consumes 1 mm(2) of die area. The P-sat of 21.1 dBm is the highest among reported W-band PAs in CMOS technology.

引用

页数：3

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