Rapid thermal annealing effects on tin oxide nanowires prepared by vapor-liquid-solid technique

被引：46

作者：

Kar, Ayan ^{[1
]}

Yang, Jianyong ^{[1
]}

Dutta, Mitra ^{[1
,2
]}

Stroscio, Michael A. ^{[1
,2
,3
]}

Kumari, Jyoti ^{[4
]}

Meyyappan, M. ^{[4
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Chicago, IL 60607 USA

[2] Univ Illinois, Dept Phys, Chicago, IL 60607 USA

[3] Univ Illinois, Dept Bioengn, Chicago, IL 60607 USA

[4] NASA, Ames Res Ctr, Ctr Nanotechnol, Moffett Field, CA 94035 USA

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 06期

关键词：

GROWTH; SNO2;

D O I：

10.1088/0957-4484/20/6/065704

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Tin oxide nanowires have been grown on p-type silicon substrates using a gold-catalyst-assisted vapor-liquid-solid growth process. The nanowires were annealed in the presence of oxygen at 700 degrees C for different time intervals. The changes in material properties of the nanowires after annealing were investigated using various characterization techniques. Annealing improves the crystal quality of the nanowires as seen from Raman spectroscopy analysis. Photoluminescence (PL) data indicates a decrease in the oxygen vacancies and defects after annealing, affecting the luminescence from the nanowires. In addition, x-ray photoelectron spectroscopy (XPS) was used to obtain the changes in the tin and oxygen atomic concentrations before and after annealing, from which the stoichiometry was calculated.

引用

页数：4

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