Review of inductively coupled plasmas: Nano-applications and bistable hysteresis physics

被引:137
作者
Lee, Hyo-Chang [1 ]
机构
[1] Korea Res Inst Stand & Sci, Daejeon 305340, South Korea
关键词
ELECTRON-ENERGY DISTRIBUTION; H-MODE TRANSITION; CALCULATED CROSS-SECTIONS; MOLECULAR NITROGEN; LOW-TEMPERATURE; BI-STABILITY; IMPACT IONIZATION; DISCHARGE PLASMA; POWER DEPOSITION; LAYER GRAPHENE;
D O I
10.1063/1.5012001
中图分类号
O59 [应用物理学];
学科分类号
摘要
Many different gas discharges and plasmas exhibit bistable states under a given set of conditions, and the history-dependent hysteresis that is manifested by intensive quantities of the system upon variation of an external parameter has been observed in inductively coupled plasmas (ICPs). When the external parameters (such as discharge powers) increase, the plasma density increases suddenly from a low-to high-density mode, whereas decreasing the power maintains the plasma in a relatively high-density mode, resulting in significant hysteresis. To date, a comprehensive description of plasma hysteresis and a physical understanding of the main mechanism underlying their bistability remain elusive, despite many experimental observations of plasma bistability conducted under radio-frequency ICP excitation. This fundamental understanding of mode transitions and hysteresis is essential and highly important in various applied fields owing to the widespread use of ICPs, such as semiconductor/display/solar-cell processing (etching, deposition, and ashing), wireless light lamp, nanostructure fabrication, nuclear-fusion operation, spacecraft propulsion, gas reformation, and the removal of hazardous gases and materials. If, in such applications, plasma undergoes a mode transition and hysteresis occurs in response to external perturbations, the process result will be strongly affected. Due to these reasons, this paper comprehensively reviews both the current knowledge in the context of the various applied fields and the global understanding of the bistability and hysteresis physics in the ICPs. At first, the basic understanding of the ICP is given. After that, applications of ICPs to various applied fields of nano/environmental/energy-science are introduced. Finally, the mode transition and hysteresis in ICPs are studied in detail. This study will show the fundamental understanding of hysteresis physics in plasmas and give open possibilities for applications to various applied fields to find novel control knob and optimizing processing conditions. (C) 2018 Author(s).
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页数:26
相关论文
共 194 条
[1]   Cryogenic etching of deep narrow trenches in silicon [J].
Aachboun, S ;
Ranson, P ;
Hilbert, C ;
Boufnichel, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04) :1848-1852
[2]   Developments of plasma etching technology for fabricating semiconductor devices [J].
Abe, Haruhiko ;
Yoneda, Masahiro ;
Fujlwara, Nobuo .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (03) :1435-1455
[3]   Negative differential conductivity of electrons in pure rare gases [J].
Aleksandrov, NL ;
Dyatko, NA ;
Kochetov, IV ;
Napartovich, AP ;
Lo, D .
PHYSICAL REVIEW E, 1996, 53 (03) :2730-2734
[4]   HIGH-DENSITY PLASMA MODE OF AN INDUCTIVELY COUPLED RADIO-FREQUENCY DISCHARGE [J].
AMORIM, J ;
MACIEL, HS ;
SUDANO, JP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :362-365
[5]  
Anderson J. M., 1970, U. S. patent, Patent No. [3,500,118, 3500118]
[6]   Current switching of resistive states in magnetoresistive manganites [J].
Asamitsu, A ;
Tomioka, Y ;
Kuwahara, H ;
Tokura, Y .
NATURE, 1997, 388 (6637) :50-52
[7]   Realization of atomic layer etching of silicon [J].
Athavale, SD ;
Economou, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :3702-3705
[8]   Characterization of a time multiplexed inductively coupled plasma etcher [J].
Ayón, AA ;
Braff, R ;
Lin, CC ;
Sawin, HH ;
Schmidt, MA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (01) :339-349
[9]   Minihelicon Plasma Thruster [J].
Batishchev, Oleg V. .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2009, 37 (08) :1563-1571
[10]  
Bethenod J., 1936, Electromagnetic Apparatus, Patent No. [US2030957, 2030957]