Low Power and Improved Switching Properties of Selector-Less Ta2O5 Based Resistive Random Access Memory Using Ti-Rich TiN Electrode

被引：7

作者：

Kim, Beomyong ^{[1
]}

Kim, Wangee ^{[1
]}

Kim, Hyojune ^{[1
]}

Jung, Kyooho ^{[1
]}

Park, Wooyoung ^{[1
]}

Seo, Bomin ^{[1
]}

Joo, Moonsig ^{[1
]}

Lee, Keejeung ^{[1
]}

Hong, Kwon ^{[1
]}

Park, Sungki ^{[1
]}

机构：

[1] SK Hynix Semicond Inc, R&D Div, NM Mat Res Team, Inchon 467701, Gyeonggi, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期

关键词：

WORK FUNCTION;

D O I：

10.7567/JJAP.52.04CD05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of TiN top electrode composition (TiN vs Ti-rich TiN) on the resistive switching characteristics of selector-less TiN/TiOx/Ta2O5/TiN resistive random access memory (ReRAM) are investigated. Ti-rich TiN enables TiOx to have a higher concentration of oxygen vacancy and reduce barrier height between top electrode and TiOx. This leads to higher on/off current ratio and lower operation voltage without degradation of non-linearity which is the important factor for selector-less type ReRAM, compared to the stoichiometric TiN resistor stack. Consequently, it is verified that the switching mechanism is hybrid combination of filament formation and redox reaction in switching operation. This work is applicable to both high density and cost-effective ReRAM. (c) 2013 The Japan Society of Applied Physics

引用

页数：5

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