Hydrogen-Sensing Properties of a Pd/AlGaN/GaN-Based Field-Effect Transistor Under a Nitrogen Ambience

被引：21
作者：
Hsu, Chi-Shiang [1 ]
Chen, Huey-Ing [2 ]
Chou, Po-Cheng [1 ]
Liou, Jian-Kai [1 ]
Chen, Chun-Chia [1 ]
Chang, Chung-Fu [1 ]
Liu, Wen-Chau [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
来源：
IEEE SENSORS JOURNAL | 2013年 / 13卷 / 05期
关键词：
HFET; hydrogen sensor; nitrogen ambience; Pd/AlGaN; LIGHT-EMITTING DIODE; SENSORS; PALLADIUM; PERFORMANCE; OXYGEN;
D O I：
10.1109/JSEN.2013.2243430
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The hydrogen-sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) under a nitrogen ambience are studied in this paper. Good and stable hydrogen-sensing behaviors are obtained over the operating temperature from 30 degrees C to 250 degrees C. In addition, HFET shows the significant hydrogen-detecting ability under an extremely low hydrogen concentration of 10-ppb H-2/N-2. Good transient responses are also observed even at room temperature. In addition, a small and nearly constant value of recovery time (approximate to 20 s) is acquired when the hydrogen concentration is higher than 1-ppm H-2/N-2 at room temperature. Therefore, the studied device shows a promise for high-performance, high-temperature electronics, microsensors, and microelectromechanical system applications.
引用
收藏
页码：1787 / 1793
页数：7
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