Preparation and Dielectric Properties of Celsian Ceramics Based on Hexagonal BaAl2Si2O8

被引：5

作者：

Savchuk, G. K. ^{[1
]}

Petrochenko, T. P. ^{[1
]}

Klimza, A. A. ^{[1
]}

机构：

[1] Belarussian Acad Sci, Sci Pract Mat Res Ctr, Minsk 220072, BELARUS

来源：

INORGANIC MATERIALS | 2013年 / 49卷 / 06期

关键词：

Dielectric Property; Ceramic Sample; Firing Temperature; Rietveld Method; Relative Dielectric Permittivity;

D O I：

10.1134/S0020168513060101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Celsian ceramics based on hexagonal BaAl2Si2O8 have been prepared through synthesis at 1450 degrees C followed by firing at 1500 degrees C. The unit-cell parameters of BaAl2Si2O8 and principal bond distances in its structure have been determined by the Rietveld method. Using differential thermal analysis and temperature-dependent dielectric measurements, we have determined the temperature of the alpha (hexagonal) to beta (hexagonal) phase transition in our samples: 280-320 degrees C.

引用

页码：632 / 637

页数：6

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