Piezoscopic deep-level transient spectroscopy studies of the silicon divacancy

被引：14
作者：
Dobaczewski, L
Goscinski, K
Zytkiewicz, ZR
Nielsen, KB
Rubaldo, L
Andersen, O
Peaker, AR
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Univ Manchester, Inst Sci & Technol, Ctr Elect Mat, Manchester M60 1QD, Lancs, England
[3] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus, Denmark
[4] High Field Magnet Lab, MPI, CNRS, F-38046 Grenoble, France
来源：
PHYSICAL REVIEW B | 2002年 / 65卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.65.113203
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
It is shown that the divacancy in silicon in the diamagnetic doubly negative charge state has a static trigonal symmetry with inward breathing mode lattice relaxation. There is no measurable Jahn-Teller effect, unlike other charge states of the defect. This conclusion has been drawn from an analysis of the piezoscopic characteristics of the complex derived from high-resolution (Laplace) deep-level transient spectroscopy.
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页码：1 / 4
页数：4
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