Giant Interlayer Magnetoresistances and Strong Anisotropy in p-type Sb2Te3 Single Crystals

被引：3
作者：
Yue, Zengji [1 ]
Wang, Xiaolin [1 ]
Dou, Shixue [1 ]
机构：
[1] Univ Wollongong, Inst Superconducting & Elect Mat, Spintron & Elect Mat Grp, Wollongong, NSW 2522, Australia
来源：
INTEGRATED FERROELECTRICS | 2012年 / 140卷
基金：
澳大利亚研究理事会;
关键词：
Giant magneto-resistance; anisotropy; Fermi surface; HGTE QUANTUM-WELLS; TOPOLOGICAL INSULATORS; BI2TE3; SURFACE; PHASE;
D O I：
10.1080/10584587.2012.741898
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Anisotropic interlayer magneto-transport properties have been studied over a broad range of temperatures and magnetic fields in p-type Sb2Te3 single crystals. Giant interlayer magnetoresistance (MR) of up to 400% was observed, which exhibits quadratic field dependences in low fields and becomes linear at high fields without any trend towards saturation. The interlayer MR displays strong anisotropy and is attributable to the anisotropy of the Fermi surface. The observed giant anisotropic interlayer MR could find applications in p-type Sb2Te3 based magneto-electronic devices.
引用
收藏
页码：155 / 160
页数：6
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