The mechanical design of hybrid graphene/boron nitride nanotransistors: Geometry and interface effects

被引:33
作者
Eshkalak, Kasra Einalipour [1 ]
Sadeghzadeh, Sadegh [1 ]
Jalaly, Maisam [1 ]
机构
[1] IUST, Sch New Technol, Nanotechnol Dept, Tehran 1684613114, Iran
关键词
Graphene/BN hybrid; Interface; Mechanical properties; Molecular dynamics; ELECTRONIC-PROPERTIES; THERMAL-CONDUCTIVITY; MOLECULAR-DYNAMICS; BORON; TRANSISTORS;
D O I
10.1016/j.ssc.2017.12.001
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
From electronic point of view, graphene resembles a metal or semi-metal and boron nitride is a dielectric material (band gap = 5.9 eV). Hybridization of these two materials opens band gap of the graphene which has expansive applications in field-effect graphene transistors. In this paper, the effect of the interface structure on the mechanical properties of a hybrid graphene/boron nitride was studied. Young's modulus, fracture strain and tensile strength of the models were simulated. Three likely types (hexagonal, octagonal and decagonal) were found for the interface of hybrid sheet after relaxation. Although C-B bonds at the interface were indicated to result in more promising electrical properties, nitrogen atoms are better choice for bonding to carbon for mechanical applications.
引用
收藏
页码:82 / 86
页数:5
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