Luminescent characteristics of InGaAsP/InP multiple quantum well structures by impurity-free vacancy disordering

被引：0
作者：
Zhao, J
Feng, ZC [1 ]
Wang, YC
Deng, JC
Xu, G
机构：
[1] Natl Taiwan Univ, Grad Inst ElectroOpt Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[3] Tianjin Normal Univ, Coll Phys & Elect Informat, Tianjin 300074, Peoples R China
[4] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada
来源：
SURFACE & COATINGS TECHNOLOGY | 2006年 / 200卷 / 10期
关键词：
InP; InGaAsP; molecular beam epitaxy; quantum well; impurity-free vacancy disordering (IFVD); optical properties;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
InGaAsPAnP multiple quantum wells with quantum well intermixing (QWI) have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics were investigated using photoluminescence (PL) and photoreflectance (PR), from which the band Gap blueshift was observed. Si3N4, SiO2 and SOG (spin on glass) were used for the dielectric layer to enhance intermixing from the out-diffusion of Group III atoms. All samples were annealed by rapid thermal annealing (RTA). The results indicate that the band gap blueshift varies with the dielectric layers and the annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAs/InP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination. (c) 2005 Elsevier B.V. All rights reserved.
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页码：3245 / 3249
页数：5
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