Mode locking in Fabry-Perot semiconductor lasers

被引：34

作者：

Nomura, Y ^{[1
]}

Ochi, S ^{[1
]}

Tomita, N ^{[1
]}

Akiyama, K ^{[1
]}

Isu, T ^{[1
]}

Takiguchi, T ^{[1
]}

Higuchi, H ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan

来源：

PHYSICAL REVIEW A | 2002年 / 65卷 / 04期

关键词：

D O I：

10.1103/PhysRevA.65.043807

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Passive mode-locking (ML) operation in semiconductor quantum-well (QW) lasers with Fabry-Perot (FP) cavities is investigated theoretically and experimentally. Structural and operational conditions for a semiconductor QW laser to exhibit "amplitude modulation (AM)" or "frequency modulation" ML operations are investigated by numerical analysis based on a semiclassical laser model. It is shown experimentally that clear AM ML pulses self-build and persist under continuous current injection in In1-xGaxAs/In1-xGaxAsyP1-y/InP-based FP QW lasers with cavity lengths of 300-600 mum. The observed ML features are explained in terms of the laser model.

引用

页数：11

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