Densification and microstructure evolution during sintering of silicon under controlled water vapor pressure

被引：2

作者：

Lebrun, J. M. ^{[1
]}

Sassi, A. ^{[1
]}

Pascal, C. ^{[1
]}

Missiaen, J. M. ^{[1
]}

机构：

[1] UJF, Lab Sci & Ingn Mat & Proc, SIMaP, Grenoble INP,CNRS, F-38402 St Martin Dheres, France

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2013年 / 33卷 / 15-16期

关键词：

Silicon; Sintering; Atmosphere control; Microstructure evolution; Kinetics; POWDER; LAYER;

D O I：

10.1016/j.jeurceramsoc.2013.06.024

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Sintering of fine silicon powder was studied under controlled water vapor pressures using the Temperature Pressure Sintering Diagram approach. The water vapor pressure surrounding the sample was deduced from thermogravimetric analysis and related to the water content of the incoming gas flux with a simple mass transfer model. The thickness of the silica layer covering silicon particles was then monitored by the water vapor pressure and the microstructure evolution and densification during sintering could be controlled. Stabilizing the silica layer indeed inhibits grain coarsening and allows better densification of the compacts under humidified atmosphere as compared to dry atmosphere. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：2993 / 3000

页数：8

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