Substrate strain manipulation by nanostructure perimeter forces

被引：14

作者：

Bonera, E. ^{[1
,2
]}

Bollani, M. ^{[3
]}

Chrastina, D. ^{[4
,5
]}

Pezzoli, F. ^{[1
,2
,6
]}

Picco, A. ^{[1
,2
]}

Schmidt, O. G. ^{[6
,7
]}

Terziotti, D. ^{[1
,2
]}

机构：

[1] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[2] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy

[3] L NESS, CNR IFN, I-22100 Como, Italy

[4] L NESS, I-22100 Como, Italy

[5] Politecn Milan, Polo Reg Como, I-22100 Como, Italy

[6] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

[7] Tech Univ Dresden, Ctr Adv Elect Dresden, Dresden, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 16期

关键词：

ASSEMBLED SIGE ISLANDS; RAMAN-SPECTROSCOPY; SILICON; STRESS; DISLOCATIONS; DEFECTS; MISFIT;

D O I：

10.1063/1.4802686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Edge forces exerted by epitaxial nanostructures are shown to induce high levels of strain in the substrate. These very high localized forces appear at the perimeter and the resulting strain can be exploited to engineer the functional properties of the substrate. High levels of strain in a Si substrate are induced by SiGe nanostructures, starting from both top-down and bottom-up approaches. Compressive uniaxial strains of up to -0.7% are demonstrated. (C) 2013 AIP Publishing LLC.

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页数：5

相关论文

共 44 条

[1] Angular dispersion of optical phonon frequencies in strained cubic crystals [J].

Anastassakis, E .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (07) :3046-3056

[2]

ANASTASSAKIS E, 1991, NATO ADV SCI I B-PHY, V273, P173

[3]

[Anonymous], 1970, Theory of elasticity (3rd Edition)

[4] MULTIPLICATION OF MISFIT DISLOCATIONS IN EPITAXIAL LAYERS [J].

BEANLAND, R .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (09) :4031-4035

[5] Lithographically defined low dimensional SiGe nanostripes as silicon stressors [J].

Bollani, M. ;

Chrastina, D. ;

Fiocco, M. ;

Mondiali, V. ;

Frigerio, J. ;

Gagliano, L. ;

Bonera, E. .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (09)

[6] Ordered Arrays of SiGe Islands from Low-Energy PECVD [J].

Bollani, M. ;

Bonera, E. ;

Chrastina, D. ;

Fedorov, A. ;

Montuori, V. ;

Picco, A. ;

Tagliaferri, A. ;

Vanacore, G. ;

Sordan, R. .

NANOSCALE RESEARCH LETTERS, 2010, 5 (12) :1917-1920

[7] Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition [J].

Bollani, M. ;

Chrastina, D. ;

Fedorov, A. ;

Sordan, R. ;

Picco, A. ;

Bonera, E. .

NANOTECHNOLOGY, 2010, 21 (47)

[8] Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy [J].

Bollani, Monica ;

Chrastina, Daniel ;

Montuori, Valeria ;

Terziotti, Daniela ;

Bonera, Emiliano ;

Vanacore, Giovanni M. ;

Tagliaferri, Alberto ;

Sordan, Roman ;

Spinella, Corrado ;

Nicotra, Giuseppe .

NANOTECHNOLOGY, 2012, 23 (04)

[9] Raman spectroscopy of strain in subwavelength microelectronic devices [J].

Bonera, E ;

Fanciulli, M ;

Mariani, M .

APPLIED PHYSICS LETTERS, 2005, 87 (11)

[10] Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations [J].

Bonera, E. ;

Pezzoli, F. ;

Picco, A. ;

Vastola, G. ;

Stoffel, M. ;

Grilli, E. ;

Guzzi, M. ;

Rastelli, A. ;

Schmidt, O. G. ;

Miglio, L. .

PHYSICAL REVIEW B, 2009, 79 (07)

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