MOSFET Modeling based on Electromagnetic Interference (EMI)

被引：1

作者：

Yang, TianPeng ^{[1
]}

Ma, QiShuang ^{[1
]}

机构：

[1] Beijing Univ Aeronaut & Astronaut, Sch Automat Sci & Elect Engn, Beijing 100083, Peoples R China

来源：

MATERIALS, MECHANICAL ENGINEERING AND MANUFACTURE, PTS 1-3 | 2013年 / 268-270卷

关键词：

Electromagnetic Interference; Lumped electric charge; MOSFET;

D O I：

10.4028/www.scientific.net/AMM.268-270.1299

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

On the basis of the lumped electric charge, the inner P type body region and the N-type drift region electric charge of VDMOSFET were respectively shown in three districts: accumulation, depletion, inversion. The application of carrier transport equation, continuity equation and Poisson equation, characterized different regions electric charge. According to the variation of the electric charge, the parasitic capacitance C-GD, C-GS and C-DS were determined, and the model parameters obtained by linear extrapolation and curve fitting. The MOSFET model was completed in MAST language. The results obtained experimentally with Boost circuit and by Saber software simulation confirm the accuracy of MOSFET model.

引用

页码：1299 / 1303

页数：5

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