OxRAM-based Non Volatile Flip-Flop in 28nm FDSOI

被引：0

作者：

Jovanovic, N. ^{[1
,3
,4
]}

Thomas, O. ^{[1
]}

Vianello, E. ^{[1
]}

Portal, J-M ^{[2
]}

Nikolic, B. ^{[3
]}

Naviner, L. ^{[4
]}

机构：

[1] CEA Grenoble, LETI, F-38054 Grenoble, France

[2] Aix Marseille Univ, CNRS, UMR 6242, IM2NP, Marseille, France

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[4] Telecom ParisTech, F-75637 Paris, France

来源：

2014 IEEE 12TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a robust OxRAM-based nonvolatile flip-flop (NVFF) solution, designed for deep nano-scaled CMOS technologies. Forming, set and reset operations rely on a reliable design approach using thin gate oxide CMOS. The NVFF is benchmarked against a standard FF in 28nm CMOS FDSOI. Non-volatility is added with minimal impact on the FF performances.

引用

页码：141 / 144

页数：4

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