OxRAM-based Non Volatile Flip-Flop in 28nm FDSOI

被引：0
|
作者：
Jovanovic, N. [1 ,3 ,4 ]
Thomas, O. [1 ]
Vianello, E. [1 ]
Portal, J-M [2 ]
Nikolic, B. [3 ]
Naviner, L. [4 ]
机构：
[1] CEA Grenoble, LETI, F-38054 Grenoble, France
[2] Aix Marseille Univ, CNRS, UMR 6242, IM2NP, Marseille, France
[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[4] Telecom ParisTech, F-75637 Paris, France
来源：
2014 IEEE 12TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a robust OxRAM-based nonvolatile flip-flop (NVFF) solution, designed for deep nano-scaled CMOS technologies. Forming, set and reset operations rely on a reliable design approach using thin gate oxide CMOS. The NVFF is benchmarked against a standard FF in 28nm CMOS FDSOI. Non-volatility is added with minimal impact on the FF performances.
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收藏
页码：141 / 144
页数：4
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