Morphological variations of Mn-doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by adsorption reaction method

被引：4

作者：

Balamurali, Subramanian ^{[1
,2
]}

Chandramohan, Rathinam ^{[2
]}

Karunakaran, Marimuthu ^{[2
,3
]}

Mahalingam, Thayan ^{[4
]}

Parameswaran, Padmanaban ^{[5
]}

Suryamurthy, Nagamani ^{[6
]}

Sukumar, Arcod Anandhakrishnan ^{[7
]}

机构：

[1] Manonmaniam Sundaranar Univ, Dept Phys, Tirunelveli 627012, Tamil Nadu, India

[2] Sree Sevugan Annamalai Coll, Dept Phys, Devakottai 630303, Tamil Nadu, India

[3] Sethupathy Govt Arts Coll, Dept Phys, Ramanathapuram 623502, Tamil Nadu, India

[4] Karunya Univ, Dept Phys, Coimbatore 641114, Tamil Nadu, India

[5] IGCAR, Dept Mat Sci, Kalpakkam 603102, Tamil Nadu, India

[6] IGCAR, Reactor Operat Div, Kalpakkam 603102, Tamil Nadu, India

[7] Baba Atom Res Ctr, CCCM, Hyderabad 500001, Andhra Pradesh, India

来源：

MICROSCOPY RESEARCH AND TECHNIQUE | 2013年 / 76卷 / 07期

关键词：

SILAR method; Mn doped ZnO; diluted magnetic semiconductor; oxide thin films; morphology; DEPOSITION;

D O I：

10.1002/jemt.22226

中图分类号：

R602 [外科病理学、解剖学]; R32 [人体形态学];

学科分类号：

100101 ;

摘要：

Transparent conducting Mn-doped ZnO thin films have been prepared by successive ionic layer by adsorption reaction (SILAR) method. The deposition conditions have been optimized based on their structure and on the formation of smoothness, adherence, and stoichiometry. The results of the studies by X-ray diffraction, scanning electron microscope (SEM), reveal the varieties of structural and morphological modifications feasible with SILAR method. The X-ray diffraction patterns confirm that the ZnO:Mn has wurtzite structure. The interesting morphological variations with dopant concentration are observed and discussed. The films' quality is comparable with those grown with physical methods and is suitable for spintronic applications. Microsc. Res. Tech. 76:751-755, 2013. (c) 2013 Wiley Periodicals, Inc.

引用

页码：751 / 755

页数：5

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