Thin Ni film on graphene current spreading layer for GaN-based blue and ultra-violet light-emitting diodes

被引：25

作者：

Shim, Jae-Phil ^{[1
]}

Seo, Tae Hoon ^{[2
]}

Min, Jung-Hong ^{[1
]}

Kang, Chang Mo ^{[1
]}

Suh, Eun-Kyung ^{[2
]}

Lee, Dong-Seon ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Informat & Commun, Kwangju 500712, South Korea

[2] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 15期

基金：

新加坡国家研究基金会;

关键词：

TRANSPARENT ELECTRODES; SUPERLATTICES; CONTACTS;

D O I：

10.1063/1.4802800

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We introduced a thin nickel (Ni) film onto graphene as a current spreading layer for GaN-based blue and ultraviolet (UV) light emitting diodes (LEDs). The thin Ni film was confirmed to improve the electrical properties of the graphene by reducing the sheet and contact resistances. The advantages of Ni on graphene were more remarkable in UV LEDs, in which the operation voltage was reduced from 13.2V for graphene alone to 7.1 V. As a result, UV LEDs with Ni on graphene showed a uniform and reliable light emission, at similar to 83% of electroluminescence of indium tin oxide. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802800]

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