Cathodoluminescence and photoluminescence of amorphous silicon oxynitride

被引：21

作者：

Gritsenko, VA

Shavalgin, YG

Pundur, PA

Wong, H ^{[1
]}

Lau, WM

机构：

[1] Cityu, Dept Elect Engn, 83 Tat Chee Ave, Kowloon, Peoples R China

[2] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

[3] Univ Latviya, Inst Solid State Phys, LV-1063 Riga, Latvia

[4] Chinese Univ Hong Kong, Dept Phys, Shatin, NT, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 05期

关键词：

D O I：

10.1016/S0026-2714(99)00036-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The cathodoluminescence and photoluminescence of amorphous silicon oxynitride (a-SiOxNy) films with different compositions were measured for the first time in the near infrared to visible-ultraviolet range. The red band with energy at 1.8-1.9 eV, blue band with energy 2.7 eV, ultraviolet bands with energies 3.1, 3.4-3.6, 4.4-4.7, and 5.4 eV were observed in a-SiOxNy. The 1.8-1.9 eV band is attributed to the oxygen and nitrogen atoms with unpaired electrons and the 2.7 eV band is attributed to twofold coordinated silicon atoms with two electrons. The 5.4 eV shoulder is due to the peroxy radicals and other ultraviolet bands are supposed to be due to the Si-Si bonds. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：715 / 718

页数：4

共 25 条

[1] Electron traps created in gate oxides by Fowler-Nordheim injections [J].