Analysis of the GaAs/GaAsBi Material System for Heterojunction Bipolar Transistors

被引：20

作者：

Marks, Zefram D. ^{[1
]}

Haygood, Ian W. ^{[1
]}

Van Zeghbroeck, Bart ^{[1
]}

机构：

[1] Univ Colorado, Boulder, CO 80309 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 01期

关键词：

Bismuth compounds; heterojunction bipolar transistors; semiconductor device modeling; III-V Semiconductor Material; GAAS; MOBILITY;

D O I：

10.1109/TED.2012.2226592

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the simulation of a double heterojunction bipolar transistor using the novel GaAs/GaAsBi material system. Published material parameters were used to simulate the device performance using an analytic drift-diffusion device model. DC and RF parameters were calculated as a function of emitter current density, base thickness and doping, and emitter stripe width and doping. Current gain is predicted to be between 10(2) and 10(3) at a current density of > 10(5) A/cm(2) and a bismuth concentration of 1.5%-3%. RF performance was calculated to range from 10 to 30 GHz for f(T) and from 100 to 120 GHz for f(max) at a current density of 10(5) A/cm(2), base thickness of 100-200 nm, and emitter stripe width of 0.1-1 mu m.

引用

页码：200 / 205

页数：6

共 27 条

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