Hydrogen electrochemistry and stress-induced leakage current in silica

被引：250

作者：

Blöchl, PE ^{[1
]}

Stathis, JH

机构：

[1] IBM Res Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

[2] IBM Res Corp, TJ Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.83.372

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Hydrogen-related defects in oxygen-deficient silica, representing the material of a thermal gate oxide, are analyzed using first-principles calculations. Energetics and charge-state levels of oxygen vacancies, hydrogen, and their complexes in the silica framework art mapped out. The neutral hydrogen bridge, called E-4' in quartz, is identified as the trap responsible for stress-induced leakage current, a forerunner df dielectric breakdown id metal-oxide-semiconductor devices.

引用

页码：372 / 375

页数：4

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