Analytical I-V model and numerical analysis of single electron transistor

被引：1

作者：

Su Li-Na ^{[1
]}

Gu Xiao-Feng ^{[1
]}

Qin Hua ^{[2
]}

Yan Da-Wei ^{[1
]}

机构：

[1] Jiangnan Univ, Dept Elect Engn, Minist Educ, Key Lab Adv Proc Control Light Ind, Wuxi 214122, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices, Suzhou 215123, Peoples R China

来源：

ACTA PHYSICA SINICA | 2013年 / 62卷 / 07期

基金：

中国国家自然科学基金;

关键词：

single electron transistor; analytical model; Monte Carlo; master equation; DEVICES;

D O I：

10.7498/aps.62.077301

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The analytical I-V model of single electron transistor has been established and simulated by combining the Monte Carlo method with the Master Equation method. Effects of gate voltage, drain voltage, temperature, and tunneling junction resistance on electrical characteristics of a single electron transistor are analyzed. Simulation results indicate that for the device with symmetrical tunneling junction structure, the Coulomb staircases shift with increasing gate voltage, and the Coulomb oscillation amplitude increases with increasing drain voltage, while the Coulomb gaps decrease. The Coulomb staircases and the Coulomb oscillation disappear gradually with increasing temperature. The Coulomb blockade effects become more significant when the resistance ratio of the two asymmetrical tunneling junctions increases.

引用

页数：7

共 12 条

[1] COULOMB-BLOCKADE IN A SILICON TUNNEL JUNCTION DEVICE [J].