Growth of high-quality homoepitaxial CVD diamond films at high growth rate

被引：56

作者：

Teraji, T ^{[1
]}

Mitani, S ^{[1
]}

Wang, CL ^{[1
]}

Ito, T ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 235卷 / 1-4期

基金：

日本学术振兴会;

关键词：

characterization; crystal morphology; chemical vapor deposition processes; homoepitaxial growth; diamond; semiconducting materials;

D O I：

10.1016/S0022-0248(01)01802-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High growth-rate deposition of similar to 2 mum/h has been achieved for high-quality diamond (1 0 0) film growth by means of high-power microwave-plasma chemical-vapor deposition (MPCVD). The growth rate is at least 40 times higher than the values reported from conventional low-power MPCVD in the case of high-quality diamond film growth. Cathodoluminescence spectra from the grown diamond films reveal strong band-edge emissions even at room temperature, indicating high crystalline quality of the diamond films. With increasing growth temperature, the film surface became flat and the intensity of the band-edge emission strong. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：287 / 292

页数：6

共 15 条

[1]

COLLINS AT, 1989, MATER RES SOC S P, V162, P3

[2] DEPOSITION AND CHARACTERIZATION OF DIAMOND, SILICON-CARBIDE AND GALLIUM NITRIDE THIN-FILMS [J].

DAVIS, RF .

JOURNAL OF CRYSTAL GROWTH, 1994, 137 (1-2) :161-169

[3] DEVICE APPLICATIONS OF DIAMONDS [J].

GEIS, MW ;

EFREMOW, NN ;

RATHMAN, DD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1953-1954

[4] Atomic force microscopy study of atomically flat (001) diamond surfaces treated with hydrogen plasma [J].

Hayashi, K ;

Yamanaka, S ;

Watanabe, H ;

Sekiguchi, T ;

Okushi, H ;

Kajimura, K .

APPLIED SURFACE SCIENCE, 1998, 125 (01) :120-124

[5]

SEVILLANO E, 1998, LOW PRESSURE SYNTHET

[6] CHEMICAL CRYSTALLIZATION OF DIAMOND FROM THE ACTIVATED VAPOR-PHASE [J].

SPITSYN, BV .

JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) :1162-1167

[7]

Takeuchi D, 1999, PHYS STATUS SOLIDI A, V174, P101, DOI 10.1002/(SICI)1521-396X(199907)174:1<101::AID-PSSA101>3.0.CO

[8]

2-O

[9] High-quality homoepitaxial diamond films grown at normal deposition rates [J].

Wang, CL ;

Irie, M ;

Ito, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (3A) :L212-L214

[10] Growth and characterization of hillock-free high quality homoepitaxial diamond films [J].

Wang, CL ;

Irie, M ;

Ito, T .

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