Self-assembled carbon-induced germanium quantum dots studied by grazing-incidence small-angle x-ray scattering

被引：40

作者：

Stangl, J

Holy, V

Mikulik, P ^{[1
]}

Bauer, G

Kegel, I

Metzger, TH

Schmidt, OG

Lange, C

Eberl, K

机构：

[1] Johannes Kepler Univ Linz, Inst Semicond Phys, A-4040 Linz, Austria

[2] Univ Munich, Sekt Phys, D-80539 Munich, Germany

[3] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[4] Masaryk Univ, Lab Thin Films & Nanostruct, CS-61137 Brno, Czech Republic

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 25期

关键词：

D O I：

10.1063/1.124179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a structural investigation of buried C-induced Ge quantum dot multilayers grown on (001) Si by molecular-beam epitaxy. Using grazing-incidence small angle x-ray scattering, we determine the shape, the mean radius, height, and dot distance. The dot distribution is isotropic within the (001) interfaces, and no correlation of the dot positions along growth direction was found. (C) 1999 American Institute of Physics. [S0003-6951(99)00825-6].

引用

收藏

页码：3785 / 3787

页数：3

相关论文

共 10 条

[1] High-resolution x-ray diffraction from multilayered self-assembled Ge dots [J].

Darhuber, AA ;

Schittenhelm, P ;

Holy, V ;

Stangl, J ;

Bauer, G ;

Abstreiter, G .

PHYSICAL REVIEW B, 1997, 55 (23) :15652-15663

[2] Formation and optical properties of carbon-induced Ge dots [J].

Eberl, K ;

Schmidt, OG ;

Schieker, S ;

Jin-Phillipp, NY ;

Phillipp, F .

SOLID-STATE ELECTRONICS, 1998, 42 (7-8) :1593-1597

[3]

GUINIER A, 1968, XRAY DIFFRACTION

[4] Ge-quantum dots on Si(001) tailored by carbon predeposition [J].

Leifeld, O ;

Grutzmacher, D ;

Muller, B ;

Kern, K .

EPITAXY AND APPLICATIONS OF SI-BASED HETEROSTRUCTURES, 1998, 533 :183-189

[5] Annealing effects on carbon-induced germanium dots in silicon [J].

Schieker, S ;

Schmidt, OG ;

Eberl, K ;

Jin-Phillipp, NY ;

Phillipp, F .

APPLIED PHYSICS LETTERS, 1998, 72 (25) :3344-3346

[6] Ordering of self-assembled Si1-xGex islands studied by grazing incidence small-angle x-ray scattering and atomic force microscopy [J].

Schmidbauer, M ;

Wiebach, T ;

Raidt, H ;

Hanke, M ;

Kohler, R ;

Wawra, H .

PHYSICAL REVIEW B, 1998, 58 (16) :10523-10531

[7] Photoluminescence and band edge alignment of C-induced Ge islands and related SiGeC structures [J].

Schmidt, OG ;

Eberl, K .

APPLIED PHYSICS LETTERS, 1998, 73 (19) :2790-2792

[8] Formation of carbon-induced germanium dots [J].

Schmidt, OG ;

Lange, C ;

Eberl, K ;

Kienzle, O ;

Ernst, F .

APPLIED PHYSICS LETTERS, 1997, 71 (16) :2340-2342

[9] Carbon-induced germanium dots: Kinetically-limited islanding process prevents coherent vertical alignment [J].

Schmidt, OG ;

Schieker, S ;

Eberl, K ;

Kienzle, O ;

Ernst, F .

APPLIED PHYSICS LETTERS, 1998, 73 (05) :659-661

[10]

Warren B.E., 1990, X-ray Diffraction