Effect of cosubstitution of La and V in Bi4Ti3O12 thin films on the low-temperature deposition

被引：197
作者：
Watanabe, T
Funakubo, H
Osada, M
Noguchi, Y
Miyayama, M
机构：
[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[3] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 01期
关键词：
D O I：
10.1063/1.1430267
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The ferroelectricity of Bi4Ti3O12 (BIT), (Bi3.2La0.8)Ti3O12 (BLT), Bi-4(Ti2.97V0.03)O-12 (BTV), and (Bi3.2La0.8)(Ti2.97V0.03)O-12 (BLTV) films prepared at 600 degreesC by metalorganic chemical vapor deposition was compared. For the BIT, BLT, BTV films deposited on (111)Pt/TiO2/SiO2/Si substrates, the ferroelectricity was not obtained even though the films consisted of a single phase. On the other hand, the BLTV films exhibited clear ferroelectricity. Furthermore, the degree of squareness of the hysteresis loops of the BLTV films was improved by changing the bottom electrode from Pt to Ir, (111)Ir/TiO2/SiO2/Si substrate; the remanent polarization and the coercive field became 8.5 muC/cm(2) and 48 kV/cm, respectively. Moreover, good fatigue endurance up to 10(9) switching cycles was confirmed for the (Bi3.2La0.8)(Ti2.97V0.03)O-12 thin film. Therefore, cosubstitution of La and V in BIT thin films is effective for lowering the deposition temperature of the film. (C) 2002 American Institute of Physics.
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页码：100 / 102
页数：3
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