Preparation and characterization of c-axis oriented epitaxial Bi2VO5.5 thin films prepared by metalorganic chemical vapor deposition

被引：1

作者：

Ishikawa, K ^{[1
]}

Sakai, T ^{[1
]}

Watanabe, T ^{[1
]}

Funakubo, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

ASIAN CERAMIC SCIENCE FOR ELECTRONICS I | 2002年 / 214-2卷

关键词：

CVD; Bi2VO5.5; Bi(CH3)(3); VO(O center dot C2H5)(3); epitaxial film;

D O I：

10.4028/www.scientific.net/KEM.214-215.189

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Bi2VO5.5 (BVO) thin films were epitaxially grown on (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition(MOCVD). The lattice mismatch between the film and the substrates affected the film orientation and the crystallinity at a low temperature of 400 degreesC. The BVO film with c-axis orientation had a low dielectric constant of 43 and low magnitude of leakage current. The c-axis-oriented BVO film displayed the ferro electricity with two times the remanent polarization (2Pr) and the coercive field (Ec) of 0.06 muC/cm(2) and 9 kV/cm, respectively.

引用

页码：189 / 192

页数：4