Preparation and characterization of c-axis oriented epitaxial Bi2VO5.5 thin films prepared by metalorganic chemical vapor deposition

被引:1
|
作者
Ishikawa, K [1 ]
Sakai, T [1 ]
Watanabe, T [1 ]
Funakubo, H [1 ]
机构
[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源
ASIAN CERAMIC SCIENCE FOR ELECTRONICS I | 2002年 / 214-2卷
关键词
CVD; Bi2VO5.5; Bi(CH3)(3); VO(O center dot C2H5)(3); epitaxial film;
D O I
10.4028/www.scientific.net/KEM.214-215.189
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Bi2VO5.5 (BVO) thin films were epitaxially grown on (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition(MOCVD). The lattice mismatch between the film and the substrates affected the film orientation and the crystallinity at a low temperature of 400 degreesC. The BVO film with c-axis orientation had a low dielectric constant of 43 and low magnitude of leakage current. The c-axis-oriented BVO film displayed the ferro electricity with two times the remanent polarization (2Pr) and the coercive field (Ec) of 0.06 muC/cm(2) and 9 kV/cm, respectively.
引用
收藏
页码:189 / 192
页数:4
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