Ultra Compact and High Reliable SiC MOSFET Power Module with 200oC Operating Capability

被引：0

作者：

Horio, Masafumi ^{[1
]}

Iizuka, Yuji ^{[1
]}

Ikeda, Yoshinari ^{[1
]}

Mochizuki, Eiji ^{[1
]}

Takahashi, Yoshikazu ^{[1
]}

机构：

[1] Fuji Elect Co Ltd, Elect Device Lab, Matsumoto, Nagano, Japan

来源：

2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2012年

关键词：

SiC power module; epoxy resin moulding; Silver sintering;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Aluminium wirebond-less power module structure was investigated and presented in ISPSD 2011 [1]. The features of this structure are high-density packaging with Copper pins connection and power circuit board, low thermal resistance with thick Copper block on Silicon Nitride ceramic substrate and high reliability with epoxy resin moulding. This paper introduces Silicon Carbide MOSFET power module with this developed structure. High temperature operating capability up to 200 degrees C is achieved with newly developed epoxy resin and Silver sintering technology. Low internal inductance is designed by laminating current paths to take an advantage of developed structure. SiC MOSFET 100A/1200V module was designed. Loss evaluation with this SiC module shows superior performance with SiC devices and also with developed structure.

引用

页码：81 / 84

页数：4