How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 μm

被引：30

作者：

Huang, Jianliang ^{[1
]}

Ma, Wenquan ^{[1
]}

Wei, Yang ^{[1
]}

Zhang, Yanhua ^{[1
]}

Cui, Kai ^{[1
]}

Cao, Yulian ^{[1
]}

Guo, Xiaolu ^{[1
]}

Shao, Jun ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2012年 / 48卷 / 10期

关键词：

InAs/GaSb; intermixing; short wavelength infrared photodetector; type II superlattice;

D O I：

10.1109/JQE.2012.2210390

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The photoluminescence (PL) peak of an InAs/GaSb superlattice (SL) structure is found to be shifted from 5.8 to 4.0 mu m at 77 K, when the growth temperature is lowered from 380 to 340 degrees C. The PL peak shift is related to In intermixing, thus some SL structures cannot reach a detection wavelength < 3 mu m. Increasing the GaSb layer thickness in the SL structure is an effective way to reach a detection wavelength of 2-3 mu m. A p-i-n detector with a 50% cutoff wavelength at 2.56 mu m at 77 K is demonstrated.

引用

页码：1322 / 1326

页数：5

共 24 条

[1] High detectivity InGaAsSb pin infrared photodetector for blood glucose sensing
Carter, BL
Shaw, E
Olesberg, JT
Chan, WK
Hasenberg, TC
Flatté, ME
[J]. ELECTRONICS LETTERS, 2000, 36 (15) : 1301 - 1303
[2] Choi K.K., 1997, The physics of quantum well infrared photodetectors
[3] Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence
Connelly, Blair C.
Metcalfe, Grace D.
Shen, Hongen
Wraback, Michael
[J]. APPLIED PHYSICS LETTERS, 2010, 97 (25)
[4] Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers
Gautam, N.
Kim, H. S.
Kutty, M. N.
Plis, E.
Dawson, L. R.
Krishna, S.
[J]. APPLIED PHYSICS LETTERS, 2010, 96 (23)
[5] THEORETICAL PERFORMANCE OF VERY LONG-WAVELENGTH INAS/INXGA1-XSB SUPERLATTICE BASED INFRARED DETECTORS
GREIN, CH
CRUZ, H
FLATTE, ME
EHRENREICH, H
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (20) : 2530 - 2532
[6] InAs/GaSb superlattices for photodetection in short wavelength infrared range
Guo, Jie
Peng, Zhenyu
Sun, Weiguo
Xu, Yingqiang
Zhou, Zhiqiang
Niu, Zhichuan
[J]. INFRARED PHYSICS & TECHNOLOGY, 2009, 52 (04) : 124 - 126
[7] Short-period InAs/GaSb type-II superlattices for mid-infrared detectors
Haugan, HJ
Szmulowicz, F
Mahalingam, K
Brown, GJ
Munshi, SR
Ullrich, B
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (26) : 1 - 3
[8] Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices
Hoang, A. M.
Chen, G.
Haddadi, A.
Pour, S. Abdollahi
Razeghi, M.
[J]. APPLIED PHYSICS LETTERS, 2012, 100 (21)
[9] Huang J. L., IMPACT INTERFA UNPUB
[10] Midinfrared type-II InAs/GaSb superlattice photodiodes toward room temperature operation
Li, Jian V.
Hill, Cory J.
Mumolo, Jason
Gunapala, Sarath
Mou, Shin
Chuang, Shun-Lien
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (16)

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