How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 μm

被引：30

作者：

Huang, Jianliang ^{[1
]}

Ma, Wenquan ^{[1
]}

Wei, Yang ^{[1
]}

Zhang, Yanhua ^{[1
]}

Cui, Kai ^{[1
]}

Cao, Yulian ^{[1
]}

Guo, Xiaolu ^{[1
]}

Shao, Jun ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2012年 / 48卷 / 10期

关键词：

InAs/GaSb; intermixing; short wavelength infrared photodetector; type II superlattice;

D O I：

10.1109/JQE.2012.2210390

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The photoluminescence (PL) peak of an InAs/GaSb superlattice (SL) structure is found to be shifted from 5.8 to 4.0 mu m at 77 K, when the growth temperature is lowered from 380 to 340 degrees C. The PL peak shift is related to In intermixing, thus some SL structures cannot reach a detection wavelength < 3 mu m. Increasing the GaSb layer thickness in the SL structure is an effective way to reach a detection wavelength of 2-3 mu m. A p-i-n detector with a 50% cutoff wavelength at 2.56 mu m at 77 K is demonstrated.

引用

页码：1322 / 1326

页数：5

共 24 条

[1] High detectivity InGaAsSb pin infrared photodetector for blood glucose sensing [J].

Carter, BL ;

Shaw, E ;

Olesberg, JT ;

Chan, WK ;

Hasenberg, TC ;

Flatté, ME .

ELECTRONICS LETTERS, 2000, 36 (15) :1301-1303

[2]

Choi K.K., 1997, The physics of quantum well infrared photodetectors

[3] Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence [J].

Connelly, Blair C. ;

Metcalfe, Grace D. ;

Shen, Hongen ;

Wraback, Michael .

APPLIED PHYSICS LETTERS, 2010, 97 (25)

[4] Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers [J].

Gautam, N. ;

Kim, H. S. ;

Kutty, M. N. ;

Plis, E. ;

Dawson, L. R. ;

Krishna, S. .

APPLIED PHYSICS LETTERS, 2010, 96 (23)

[5] THEORETICAL PERFORMANCE OF VERY LONG-WAVELENGTH INAS/INXGA1-XSB SUPERLATTICE BASED INFRARED DETECTORS [J].

GREIN, CH ;

CRUZ, H ;

FLATTE, ME ;

EHRENREICH, H .

APPLIED PHYSICS LETTERS, 1994, 65 (20) :2530-2532

[6] InAs/GaSb superlattices for photodetection in short wavelength infrared range [J].

Guo, Jie ;

Peng, Zhenyu ;

Sun, Weiguo ;

Xu, Yingqiang ;

Zhou, Zhiqiang ;

Niu, Zhichuan .

INFRARED PHYSICS & TECHNOLOGY, 2009, 52 (04) :124-126

[7] Short-period InAs/GaSb type-II superlattices for mid-infrared detectors [J].

Haugan, HJ ;

Szmulowicz, F ;

Mahalingam, K ;

Brown, GJ ;

Munshi, SR ;

Ullrich, B .

APPLIED PHYSICS LETTERS, 2005, 87 (26) :1-3

[8] Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices [J].

Hoang, A. M. ;

Chen, G. ;

Haddadi, A. ;

Pour, S. Abdollahi ;

Razeghi, M. .

APPLIED PHYSICS LETTERS, 2012, 100 (21)

[9]

Huang J. L., IMPACT INTERFA UNPUB

[10] Midinfrared type-II InAs/GaSb superlattice photodiodes toward room temperature operation [J].

Li, Jian V. ;

Hill, Cory J. ;

Mumolo, Jason ;

Gunapala, Sarath ;

Mou, Shin ;

Chuang, Shun-Lien .

APPLIED PHYSICS LETTERS, 2008, 93 (16)

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